RS1JHE3/61T
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 600V 1A DO214AC
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 7pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 250ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3V @ 1A
- Datasheet :
- RS1JHE3/61T
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Part | Manufacturer | Stock | Description |
---|---|---|---|
RS1J | ON Semiconductor | 22,500 | DIODE GEN PURP 600V 1A SMA |
RS1J | ON Semiconductor | 24,330 | DIODE GEN PURP 600V 1A SMA |
RS1J | ON Semiconductor | 24,330 | DIODE GEN PURP 600V 1A SMA |
RS1J M2G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A DO214AC |
RS1J R3G | Taiwan Semiconductor | 5,400 | DIODE GEN PURP 600V 1A DO214AC |
RS1J R3G | Taiwan Semiconductor | 6,785 | DIODE GEN PURP 600V 1A DO214AC |
RS1J R3G | Taiwan Semiconductor | 6,785 | DIODE GEN PURP 600V 1A DO214AC |
RS1J-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 600V 1A SMA |
RS1J-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 600V 1A SMA |
RS1J-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 600V 1A SMA |
RS1J-13-F | Diodes Incorporated | 55,000 | DIODE GEN PURP 600V 1A SMA |
RS1J-13-F | Diodes Incorporated | 57,509 | DIODE GEN PURP 600V 1A SMA |
RS1J-13-F | Diodes Incorporated | 57,509 | DIODE GEN PURP 600V 1A SMA |
RS1J-13-G | Diodes Incorporated | 5,000 | DIODE GENERAL PURPOSE SMA |
RS1J-E3/5AT | Vishay Semiconductor/Diodes Division | 60,000 | DIODE GEN PURP 600V 1A DO214AC |