MJ11012G
- Manufacturer
- ON Semiconductor
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- TRANS NPN DARL 60V 30A TO-3
- Manufacturer :
- ON Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 30A
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A, 5V
- Frequency - Transition :
- 4MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Package / Case :
- TO-204AA, TO-3
- Packaging :
- Tray
- Part Status :
- Active
- Power - Max :
- 200W
- Series :
- -
- Supplier Device Package :
- TO-204 (TO-3)
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Datasheet :
- MJ11012G
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