2N2896
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- BJTS
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 150mA, 10V
- Frequency - Transition :
- 120MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Packaging :
- Bulk
- Part Status :
- Active
- Power - Max :
- 1.8W
- Series :
- -
- Supplier Device Package :
- TO-18
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 15mA, 150mA
- Voltage - Collector Emitter Breakdown (Max) :
- 90V
- Datasheets
- 2N2896
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| 2N2895 | Microsemi Corporation | 5,000 | PNP TRANSISTOR |
