IGT60R190D1SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12.5A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

157pF @ 400V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerSFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

55.5W (Tc)

Rds On (Max) @ Id, Vgs :

-

Series :

CoolGaN™

Supplier Device Package :

PG-HSOF-8-3

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

-10V

Vgs(th) (Max) @ Id :

1.6V @ 960µA