IGLD60R070D1AUMA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- IC GAN FET 600V 60A 8SON
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 15A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 400V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-LDFN Exposed Pad
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Power Dissipation (Max) :
- 114W (Tc)
- Rds On (Max) @ Id, Vgs :
- -
- Series :
- CoolGaN™
- Supplier Device Package :
- PG-LSON-8-1
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- -10V
- Vgs(th) (Max) @ Id :
- 1.6V @ 2.6mA
- Datasheet :
- IGLD60R070D1AUMA1
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Part | Manufacturer | Stock | Description |
---|---|---|---|
IGLD60R070D1AUMA1 | Infineon Technologies | 5,000 | IC GAN FET 600V 60A 8SON |
IGLD60R070D1AUMA1 | Infineon Technologies | 5,000 | IC GAN FET 600V 60A 8SON |